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Dielectric and diffusion barrier multilayer for Cu(In,Ga)Se2 solar cells integration on stainless steel sheet

Identifieur interne : 000F37 ( Main/Repository ); précédent : 000F36; suivant : 000F38

Dielectric and diffusion barrier multilayer for Cu(In,Ga)Se2 solar cells integration on stainless steel sheet

Auteurs : RBID : Pascal:13-0285022

Descripteurs français

English descriptors

Abstract

For the fabrication of monolithically integrated flexible Cu(In, Ga)Se2, CIGS modules on stainless steel, individual photovoltaic cells must be insulated from metal substrates by a barrier layer that can sustain high thermal treatments. In this work, a combination of sol-gel (organosilane-sol) and sputtered SiAlxOy forming thin diffusion barrier layers (TDBL) was prepared on stainless steel substrates. The deposition of organosilane-sol dielectric layers on the commercial stainless steel (maximal roughness, Rz = 500 nm and Root Mean Square roughness, RMS = 56 nm) induces a planarization of the surface (RMS = 16.4 nm, Rz = 176 nm). The DC leakage current through the dielectric layers was measured for the metal-insulator-metal (MIM) junctions that act as capacitors. This method allowed us to assess the quality of our TDBL insulating layer and its lateral uniformity. Indeed, evaluating a ratio of the number of valid MIM capacitors to the number of tested MIM capacitors, a yield of ∼ 95% and 50% has been reached respectively with non-annealed and annealed samples based on sol-gel double layers. A yield of 100% was achieved for sol-gel double layers reinforced with a sputtered SiAlxOy coating and a third sol-gel monolayer. Since this yield is obtained on several samples, it can be extrapolated to any substrate size. Furthermore, according to Glow Discharge Optical Emission Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy measurements, these barrier layers exhibit excellent barrier properties against the diffusion of undesired atoms which could otherwise spoil the electronic and optical properties of CIGS photovoltaic cells.

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Pascal:13-0285022

Le document en format XML

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solar cells integration on stainless steel sheet</title>
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<name sortKey="Amouzou, Dodji" uniqKey="Amouzou D">Dodji Amouzou</name>
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<div type="abstract" xml:lang="en">For the fabrication of monolithically integrated flexible Cu(In, Ga)Se
<sub>2</sub>
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solar cells integration on stainless steel sheet</s1>
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<s5>04</s5>
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<s0>Indium selenides</s0>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s0>Nitrure de calcium</s0>
<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s0>Traitement thermique</s0>
<s5>09</s5>
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<fC03 i1="08" i2="X" l="ENG">
<s0>Heat treatment</s0>
<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s0>Dépôt pulvérisation</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG">
<s0>Sputter deposition</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE">
<s0>Couche mince diélectrique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG">
<s0>Dielectric thin films</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE">
<s0>Acier inoxydable</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG">
<s0>Stainless steel</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA">
<s0>Acero inoxidable</s0>
<s5>13</s5>
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<s0>Rugosité</s0>
<s5>14</s5>
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<fC03 i1="13" i2="X" l="ENG">
<s0>Roughness</s0>
<s5>14</s5>
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<s2>NC</s2>
<s5>16</s5>
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<s0>Copper</s0>
<s2>NC</s2>
<s5>16</s5>
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<fC03 i1="15" i2="X" l="SPA">
<s0>Cobre</s0>
<s2>NC</s2>
<s5>16</s5>
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<s0>Gallium</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>17</s5>
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<fC03 i1="16" i2="X" l="ENG">
<s0>Gallium</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>17</s5>
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<s0>Galio</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>17</s5>
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<fC03 i1="17" i2="3" l="FRE">
<s0>Séléniure de cuivre</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG">
<s0>Copper selenides</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE">
<s0>Séléniure de gallium</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG">
<s0>Gallium selenides</s0>
<s2>NK</s2>
<s5>19</s5>
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<fC03 i1="19" i2="X" l="FRE">
<s0>Courant fuite</s0>
<s5>29</s5>
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<fC03 i1="19" i2="X" l="ENG">
<s0>Leakage current</s0>
<s5>29</s5>
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<fC03 i1="19" i2="X" l="SPA">
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<s5>29</s5>
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<fC03 i1="20" i2="3" l="FRE">
<s0>Jonction MIM</s0>
<s5>30</s5>
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<fC03 i1="20" i2="3" l="ENG">
<s0>MIM junctions</s0>
<s5>30</s5>
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<s5>31</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG">
<s0>Capacitor</s0>
<s5>31</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA">
<s0>Condensador</s0>
<s5>31</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE">
<s0>Revêtement pulvérisation</s0>
<s5>32</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG">
<s0>Sputter coating</s0>
<s5>32</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA">
<s0>Revestimiento pulverización</s0>
<s5>32</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE">
<s0>Couche monomoléculaire</s0>
<s5>33</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG">
<s0>Monolayer</s0>
<s5>33</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA">
<s0>Capa monomolecular</s0>
<s5>33</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE">
<s0>Décharge luminescente</s0>
<s5>34</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG">
<s0>Glow discharge</s0>
<s5>34</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA">
<s0>Descarga luminiscente</s0>
<s5>34</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE">
<s0>Spectrométrie SIMS</s0>
<s5>35</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG">
<s0>Secondary ion mass spectrometry</s0>
<s5>35</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA">
<s0>Espectrometría SIMS</s0>
<s5>35</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE">
<s0>Diffusion(transport)</s0>
<s5>36</s5>
</fC03>
<fC03 i1="26" i2="3" l="ENG">
<s0>Diffusion</s0>
<s5>36</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE">
<s0>Propriété électronique</s0>
<s5>37</s5>
</fC03>
<fC03 i1="27" i2="X" l="ENG">
<s0>Electronic properties</s0>
<s5>37</s5>
</fC03>
<fC03 i1="27" i2="X" l="SPA">
<s0>Propiedad electrónica</s0>
<s5>37</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE">
<s0>Propriété optique</s0>
<s5>38</s5>
</fC03>
<fC03 i1="28" i2="X" l="ENG">
<s0>Optical properties</s0>
<s5>38</s5>
</fC03>
<fC03 i1="28" i2="X" l="SPA">
<s0>Propiedad óptica</s0>
<s5>38</s5>
</fC03>
<fC03 i1="29" i2="X" l="FRE">
<s0>Fiabilité</s0>
<s5>39</s5>
</fC03>
<fC03 i1="29" i2="X" l="ENG">
<s0>Reliability</s0>
<s5>39</s5>
</fC03>
<fC03 i1="29" i2="X" l="SPA">
<s0>Fiabilidad</s0>
<s5>39</s5>
</fC03>
<fC03 i1="30" i2="X" l="FRE">
<s0>Tension amorçage</s0>
<s5>40</s5>
</fC03>
<fC03 i1="30" i2="X" l="ENG">
<s0>Breakdown voltage</s0>
<s5>40</s5>
</fC03>
<fC03 i1="30" i2="X" l="SPA">
<s0>Voltaje perforación</s0>
<s5>40</s5>
</fC03>
<fC03 i1="31" i2="X" l="FRE">
<s0>Substrat acier inoxydable</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="32" i2="X" l="FRE">
<s0>Substrat métal</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="33" i2="X" l="FRE">
<s0>8460J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="34" i2="X" l="FRE">
<s0>8115L</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="35" i2="X" l="FRE">
<s0>8115C</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="36" i2="X" l="FRE">
<s0>7755</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21>
<s1>273</s1>
</fN21>
<fN44 i1="01">
<s1>OTO</s1>
</fN44>
<fN82>
<s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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